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10Pcs N-Channel MOSFET 5x 10N60 10A 600V & 5x IRF830 5A 500V

UGX 26,334
UGX 39,50133%

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Delivery Fees UGX 19,377
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Description:

5 x IRF830 N-Channel MOSFET + 5 x 10N60 N-Channel MOSFET.
IRF830 has been especially designed to minimize on-state resistance, have a high rugged characteristics. These devices are well suited for high efficiency switching DC/DC converters, switch power supply, DC-AC converters for uninterruped power supply, motor control.
10N60 has been especially designed to minimize on -state resistance,have a high rugged characteristics. This devices is specially well suited for high efficiency switch power supplies , power factor correction, UPS and a electronic lamp ballast base on half bridge.
IRF830 Drain Source Voltage: 500V; Drain Current: 5A.
10N60 Drain Source Voltage: 600V; Drain Current: 10A.

Specification:

IRF830:
Mounting Hole Diameter: Approx. 3mm/0.12 inch
Pin Size ( L x Pitch): Approx. 13x2mm/0.51x0.08 inch
Total Size (L x W x H): Approx. 29x10x4mm/1.14x0.39x0.16 inch
Package: TO-220AB
10N60:
Mounting Hole Diameter: Approx. 3mm/0.12 inch
Pin Size ( L x Pitch): Approx. 13x2mm/0.51x0.08 inch
Total Size (L x W x H): Approx. 29x10x4mm/1.14x0.39x0.16 inch
Package : TO-220F

Package Includes:

5 Pieces IRF830 N-Channel MOSFET
5 Pieces 10N60 N-Channel MOSFET

N-Channel Power MOSFET;MOSFET Field Effect Tube Transistor;N Channel Field Effect Tube;N Channe Field Effect Transistor;Adapter Power Tube

Specifications

Key Features

  • 5 x IRF830 N-Channel MOSFET + 5 x 10N60 N-Channel MOSFET.
  • IRF830 has been especially designed to minimize on-state resistance, have a high rugged characteristics. These devices are well suited for high efficiency switching DC/DC converters, switch power supply, DC-AC converters for uninterruped power supply, motor control.
  • 10N60 has been especially designed to minimize on -state resistance,have a high rugged characteristics. This devices is specially well suited for high efficiency switch power supplies , power factor correction, UPS and a electronic lamp ballast base on half bridge.
  • IRF830 Drain Source Voltage: 500V; Drain Current: 5A.
  • 10N60 Drain Source Voltage: 600V; Drain Current: 10A.

What’s in the box

5 Pieces IRF830 N-Channel MOSFET5 Pieces 10N60 N-Channel MOSFET

Specifications

  • SKU: GE779HA0WSQZQNAFAMZ
  • Model: N/A
  • Production Country: China
  • Size (L x W x H cm): 17.00 x 14.00 x 1.00
  • Weight (kg): 0.029
  • Color: Black
  • Main Material: as described

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10Pcs N-Channel MOSFET 5x 10N60 10A 600V & 5x IRF830 5A 500V

10Pcs N-Channel MOSFET 5x 10N60 10A 600V & 5x IRF830 5A 500V

UGX 26,334
UGX 39,50133%
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